High-frequency switch development for future 6G networks

UAB (University of Barcelona) researchers played a key role in developing a telecommunications switch that operates at very high frequencies with lower power consumption than conventional technologies. This technology, which has significant applications in the upcoming 6G mass communication systems, is more energy-efficient than current devices. The findings were recently published in Nature Electronics.

The switch, an essential element for managing signals in electronic communication devices, allows an electrical signal to pass in the ON state or blocks it in the OFF state. Currently, the most rapid switches are silicon-based RF silicon-on-insulator MOSFET switches, functioning at frequencies in the tens of gigahertz (GHz). Nevertheless, they are volatile and require a constant power  supply to remain in the ON state.

To enhance current communication systems and cater to the growing demand for faster communications, which will encompass the Internet of Things (IoT) and the widespread adoption of virtual reality, it is essential to increase the signal frequency and optimize the performance of these elements.

An international team, featuring researchers from the UAB Department of Telecommunications and Systems Engineering, has developed a switch capable of operating at twice the frequency of current silicon-based devices; with a range of up to 120 GHz, and without the necessity for constant voltage application.

The new switch employs a non-volatile material, known as hBN (Hexagonal Boron Nitride), which enables its ON or OFF state to be toggled by an electrical voltage pulse rather than a constant signal, resulting in substantial energy savings.

"Our research team from the Department of Telecommunications and Systems Engineering at the UAB participated in the design and experimental characterization of the devices in the laboratory." explains researcher Jordi Verdu.

"We have achieved a breakthrough by demonstrating the operation of switch using hBN. a non-volatile material, at frequencies up to 120 GHz for the first time. This suggests the potential use of this technology in emerging 6G mass communication systems, where a high volume of these components will be essential."

According to Verdu, this represents a "critical contribution, not only in enhancing device performance but also in promoting a more sustainable technology in terms of energy efficiency."

These devices operate based on memristance, the property where electrical resistance of a material changes upon application of voltage. Previously, ultrafast switches were experimentally developed using memeristors--devices exhibiting memristance--fabricated from two-dimensional netoworks of Hexagonal Boron Nitride (hBN) layers fused to form a surface.

This configuration enabled the device frequency to potentially achieve up to 480 GHz, albeit for only 30 cycles, rendering it impractical for real-world applications. The new approach utilizes the same material but arranges it in a superposition of layers (between 12 and 18 layers total) capable of operating at 260 GHz with a stability of approximately 2000 cycles, making it suitable for integration into electronic devices.

Presented by Autonomous University of Barcelona

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